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1.0 mym CMOS process for highly stable tera-ohm polysilicon load 1Mb SRAM
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1986
Conference Paper
Titel
1.0 mym CMOS process for highly stable tera-ohm polysilicon load 1Mb SRAM
Author(s)
Hoshi, N.
Kayama, S.
Nishihara, T.
Aoyama, J.
Komatsu, T.
Shimada, T.
Hauptwerk
International Electron Devices Meeting '86. Technical Digest
Konferenz
International Electron Devices Meeting 1986
Language
English
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Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS