Verfahren zur Erzeugung einer Metallstruktur zur lokalen elektrischen Kontaktierung einer Halbleiterstruktur

The method involves applying an electrical isolating insulating layer (2) on a semiconductor layer (1) i.e. silicon substrate, of a semiconductor structure. A lift off layer (3) i.e. silicon dioxide layer, is applied on the insulating layer. The lift off layer is locally opened. The insulating layer is locally opened. A metallic layer (4) i.e. aluminum layer, is partly applied on the lift off layer and in open areas of the lift off layer and the insulating layer. The lift off layer is removed before applying interlayers on the semiconductor structure.