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Characterization of active layers in GaAs by microwave absorption

Charakterisierung leitender Schichten in GaAs mit Mikrowellen-Absorption
: Bachem, H.; Jantz, W.; Frey, T.

Applied physics. A (1987), Nr.45, S.225-232 : Abb.,Tab.,Lit.
ISSN: 0340-3793
ISSN: 0721-7250
ISSN: 0947-8396 (Print)
ISSN: 1432-0630 (Online)
Fraunhofer IAF ()
Ladungsträgerbeweglichkeit; Ladungsträgerkonzentration; Meßverfahren; Mikrowellen-Reflexion; Schichtcharakterisierung(elektrisch); Schicht(epitaktisch); Schicht(implantiert)

Free carrier electric microwave absorption is applied to the analysis of ion implanted and epitaxial active layers in GaAs. An improved version of a previously reported waveguide system is described. It allows a quick and nondestructive determination of the sheet resistance, carrier concentration and carrier mobility of active layers. The usefulness of the method for routine electric material characterization supporting a microelectronic device fabrication is demonstrated. Finally, some explorative microwave measurements of heterostructures and photo-induced effects are reported. IAF