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Accurate measurement of the vacancy equilibrium concentration in silicon

: Zimmermann, H.


Applied Physics Letters 59 (1991), Nr.24, S.3133-3135 : Abb.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IIS B ( IISB) ()
diffusion; numerical simulation; semiconductor technology; vacancies

A procedure is described which allows the measurement of the equilibrium concentration of vacancies in silicon at 800degreeC. During a long lasting temperature treatment under inert and very clean conditions, the equilibrium concentration of the vacancies is established. According to the dominance of the Frank-Turnbull mechanism during platinum diffusion at 800degreeC, the equilibrium concentration of vacancies Csubv can then be determined from platinum diffusion profiles. A value of 4.lxl0highl3cmhighminus3 at 800degreeC for Csubv is calculated using an analytical expression, which can be deduced from the equations of the Frank-Turnbull mechanism. For the vacancy diffusion coefficient in silicon, the result is 1.3x10highminus10qcmshighminus1. Numerical simulations show the self-consistency of the vacancy parameters.