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Monolithic high gain DC to 10 GHz direct coupled feedback transimpedance amplifier unsing AlGaAs / GaAs HBTs

: Baureis, P.; Göttler, D.; Oehler, F.; Zwicknagel, P.

ESSCIRC '93. 19th European Solid State Circuits Conference. Proceedings
Gif-sur-Yvette Cedex: Editions Frontieres, 1993
ISBN: 2-86335-134-X
European Solid State Circuits Conference (ESSCIRC) <19, 1993, Sevilla>
Fraunhofer IIS A ( IIS) ()
HBT; modeling; Modellierung; optical transmission system; optisches Übertragungssystem; transimpedance amplifier; Transimpedanzverstärker

A fixed 15.5 dB gain, DC to 10 GHz transimpedance amplifier using AlGaAs / GaAs heterojunction bipolar transistor (HBT) technology is described. A 2 mu m emitter non self-aligned HBT IC process (Ft = ca. 40 GHz, Fmax = ca. 40 GHz) with MOCVD grown layers is used to fabricate the amplifier. The 1 dB power compression is measured to be at 4 dBm ouput power. The third-order intercept point (IP3) is 19 dBm at DC power of 156 mW. The compact chip size of 0.45 x 0.6mm2 and the excellent 15 Gb/s NRZ pulse response make the amplifier a good candidate for 15 Gb/s optical transmission systems.