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Mismatch of current sources and accuracy of D/A converters in 0.5 mu m GaAs/GaAlAs HEMT technology

: Feng, S.; Sauerer, J.; Seitzer, D.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE International Symposium on Circuits and Systems 1992. Proceedings
New York/N.Y.; Piscataway/N.J.: IEEE, 1992
ISBN: 0-7803-0593-0
ISBN: 0-7803-0594-9
ISBN: 0-7803-0595-7
S.224-227 (Vol.1)
International Symposium on Circuits and Systems (ISCAS) <25, 1992, San Diego/Calif.>
Fraunhofer IIS A ( IIS) ()
DAC; DAU; Digital-Analog-Umsetzung; digital to analog converter; Gallium Arsenid; gallium arsenide; modeling; Modellierung; parameter extraction; Parameterextraktion

GaAs/GaAlAs HEMT current source mismatch and digital-to-analog converter (DAC) accuracy have been analysed and measured. Using Raytheon's semi-empirical model and experimental based data, the mismatches in devices and current sources are predicted and their results agree with measurements. The high-precision DACs are also analysed in the cases of mismatching in the current sources and resistors. An 8-bit DAC has been implemented in a 0.5 mu m HEMT technology and its measured accuracy is verified to be identical to the prediction.