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Modeling the Amorphization of Si due to the Implantation of As, Ge, and Si

Modellierung der Amorphisierung von Silicium durch die Implantation von As, Ge und Si
: Stiebel, D.; Burenkov, A.; Pichler, P.; Cristiano, F.; Claverie, A.; Ryssel, H.


Ryssel, H. ; Institute of Electrical and Electronics Engineers -IEEE-:
Ion Implantation Technology 2000. Proceedings : International Conference on Ion Implantation Technology : Alpbach, Austria, 17 - 22 September 2000
Piscataway, NJ: IEEE Operations Center, 2000
ISBN: 0-7803-6462-7
ISBN: 978-0-7803-6462-2
International Conference on Ion Implantation Technology (IIT) <13, 2000, Alpbach>
Fraunhofer IIS B ( IISB) ()
silicium; Ionenimplantation; Arsen; germanium; Modellierung; Amorphisierung

New experiments have been performed to measure the two-dimensional amorphous/crystalline (a/c)-interface after implantation of arsenic, germanium, and silicon atoms. The experimental results obtained were used to check the predictability of models describing the shape of amorphous areas after ion implantation. We show that the model considered in this paper which is based on Monte-Carlo (MC) simulations is in fact well suited to describe the a/c-interface. Differences between results from experiments and simulations were explained in part by the statistical nature of ion implantation.