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A three-phase GaN-on-Si inverter IC for low-voltage motor drives

 
: Mönch, Stefan; Reiner, Richard; Benkhelifa, Fouad; Basler, Michael; Waltereit, Patrick; Quay, Rüdiger

MESAGO Messe Frankfurt GmbH, Stuttgart:
PCIM Europe digital days 2021 : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management Proceedings, 3 - 7 May 2021, CD-ROM
Berlin: VDE-Verlag, 2021
ISBN: 978-3-8007-5515-8
ISBN: 3-8007-5515-7
S.409-415
PCIM Europe Digital Days <2021, Online>
International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management <2021, Online>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()

Abstract
A GaN-based monolithic three-phase inverter IC is presented. The high-side and low-side transistors are intrinsically interleaved in each phase for low area-specific on-resistance and strong thermal coupling. Electrically, the effect of capacitive substrate coupling is investigated for SVPWM. A substrate biasing network for semi-floating substrate termination of the three-phase IC is proposed to minimize negative back-gating. Thermally, a low 5.6 μm pitch between the interleaved high-/low-side transistor fingers, and 625 μm phase-to-phase pitch reduces the temperature ripple at the kHz-range (from switching) and Hz-range (from phase-shifted currents) compared to discrete transistors.

: http://publica.fraunhofer.de/dokumente/N-635962.html