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InGaAs HEMT MMIC Technology on Silicon Substrate with Backside Field-Plate

: Leuther, Arnulf; John, Laurenz; Iannucci, Robert; Christoph, T; Aidam, Rolf; Merkle, Thomas; Tessmann, Axel


Institute of Electrical and Electronics Engineers -IEEE-:
50th European Microwave Conference, EuMC 2021. Proceedings : 12-14 January 2021, Utrecht, The Netherlands
Piscataway, NJ: IEEE, 2021
ISBN: 978-1-7281-7039-8
ISBN: 978-2-87487-059-0
ISBN: 978-2-87487-058-3
European Microwave Conference (EuMC) <50, 2021, Utrecht>
Fraunhofer IAF ()
InGaAs; HEMT; MMIC; medium power amplifier (MPA); wafer bonding; field plate

This paper presents a 20-nm gate length InGaAs HEMT MMIC technology on 100-mm Silicon substrates with nanostructured backside field-plate. Direct wafer bonding and wafer thinning is used to realize a 100 nm thick III/V device hetero structure on top of a SiO2 layer. The transistors offer an on state and off-state breakdown voltage of 2.7 and 5.0 V, respectively together with a reduced output conductance of 83 mS/mm. Both parameters demonstrate an improvement by a factor of 2compared to the IAF standard 20-nm mHEMT devices fabricated on GaAs substrates. For a prematched single-stage amplifier a transistor MSG/MAG of 7 dB was achieved at 300 GHz. Finally, the functionality of the backside field-plate was successfully demonstrated by a 300-GHz amplifier using a field-plate transistor in the output stage.