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A Three Stage Gain Cell Topology with an Active Ultra-Wideband Input Matching in H-Band

: Gatzastras, Athanasios; Massler, Hermann; Leuther, Arnulf; Chartier, Sebastian; Kallfass, Ingmar


Institute of Electrical and Electronics Engineers -IEEE-:
15th European Microwave Integrated Circuits Conference, EuMIC 2020 : 11-12 January 2021, Utrecht, The Netherlands
Piscataway, NJ: IEEE, 2021
ISBN: 978-1-7281-7040-4
ISBN: 978-2-87487-060-6
European Microwave Integrated Circuits Conference (EuMIC) <15, 2021, Utrecht>
Fraunhofer IAF ()
H-band; three stage gain cell; CG-CS-CG; active matching; monolithic millimeter-wave integrated circuit (MMIC)

This paper presents a three stage gain cell topology formed by a common gate, common source, common gate DC-decoupled configuration with conjugate complex interstage matching. The common gate (CG) cell at the input is selected in order to achieve an active ultra-wideband matching in an 50 Ω enviroment in H-Band. This amplifier, fabricated in a 35 nm InGaAs-based metamorphic high electron mobility transistor (mHEMT) technology, is designed with a center frequency of 290 GHz and cell achieves an ultra-wideband input matching of 67GHz below −10 dB. The cell reaches a small-signal gain of 9.8 dB and a 3 dB-bandwidth of 16 GHz with an simulated OP1 dB of 5.3 dBm and is realized as a millimeter-wave monolithic integrated circuit and is characterized by on-wafer measurements.