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Full H-Band LNA in 35 nm mHEMT Technology with Constant Current Bias Control

: Weber, Rainer; Leuther, Arnulf; Lozar, Roger; Massler, Hermann

Institute of Electrical and Electronics Engineers -IEEE-:
15th European Microwave Integrated Circuits Conference, EuMIC 2020 : 11-12 January 2021, Utrecht, The Netherlands
Piscataway, NJ: IEEE, 2021
ISBN: 978-1-7281-7040-4
ISBN: 978-2-87487-060-6
European Microwave Integrated Circuits Conference (EuMIC) <15, 2021, Utrecht>
Fraunhofer IAF ()
low-noise amplifier (LNA); H-band (220-325 GHz); metamorphic high electron mobility transistor (mHEMT); noise figure (NF); monolithic millimeter-wave integrated circuit (MMIC); thin-film microstrip transmission line (TF-MSL)

In this paper, a compact low noise amplifier (LNA) circuit is presented, which was designed to be co-integrated in a multi-chip radar system covering the entire H-band (220-325 GHz). It consists of three cascode stages with a total gate width of 78 μm and is realized in a thin-film microstrip line environment on a 35 nm mHEMT process. The circuit demonstrates a flat gain of approximately 22 dB over the entire H-band and a noise figure of 6.2 dB. Not common for HEMT-based voltage controlled active devices is the capability of a constant current bias control with a single supply voltage of 3.3 V which leads to a homogeneous performance over the wafer compared to the common biasing method using only voltage sources.