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Selective Metal Deposition to Increase Productivity

 
: Rhoades, R.L.; Mavliev, R.; Gottfried, K.

:

Semiconductor Equipment and Materials International -SEMI-, San Jose/Calif.:
31st Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2020 : Saratoga Springs, New York, USA 24 – 26 August 2020
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-72815-876-1
ISBN: 978-1-72815-877-8
S.314-316
Advanced Semiconductor Manufacturing Conference (ASMC) <31, 2020, Online>
Englisch
Konferenzbeitrag
Fraunhofer ENAS ()

Abstract
A novel method for selective deposition of metal features has been developed and evaluated for several different metallization applications in device manufacturing and advanced packaging technologies. Selectroplating® is based on a selective chemical modification (SCM) of field areas of a wafer and can be implemented for either a fill-based integration, such as Cu dual damascene, or an additive process such as plating of wide conductive lines. In either integration, the primary benefit of selective deposition is to prevent deposition of metal in areas between desired features thus eliminating the need to remove excess bulk metal in the next step.

: http://publica.fraunhofer.de/dokumente/N-614592.html