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Impact of surface chemistry and doping concentrations on biofunctionalization of GaN/Ga-In-N quantum wells

: Naskar, Nilanjon; Schneidereit, Martin F.; Huber, Florian; Chakrabortty, Sabyasachi; Veith, Lothar; Metzger, Markus; Kirste, Lutz; Fuchs, Theo; Diemant, Thomas; Weil, Tanja; Behm, R. Jürgen; Thonke, Klaus; Scholz, Ferdinand

Volltext urn:nbn:de:0011-n-5970634 (1.9 MByte PDF)
MD5 Fingerprint: 514ca44250bbc2779ab9a840452f80dc
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Erstellt am: 5.8.2020

Sensors. Online journal 20 (2020), Nr.15, Art. 4179, 17 S.
ISSN: 1424-8220
ISSN: 1424-8239
ISSN: 1424-3210
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IAF ()
n-type; p-type GaN; biosenor; chemical functionalization; protein adsorption; self-assembled monolayer

The development of sensitive biosensors, such as gallium nitride (GaN)-based quantum wells, transistors, etc., often makes it necessary to functionalize GaN surfaces with small moleculesor eVen biomolecules, such as proteins. As a first step in surface functionalization, we have investigated silane adsorption, as well as the formation of very thin silane layers. In the next step, the immobilization of the tetrameric protein streptavidin (as well as the attachment of chemically modified irontransport protein ferritin (ferritin-biotin-rhodamine complex)) was realized on these films. The degree of functionalization of the GaN surfaces was determined by fluorescence measurements with fluorescent-labeled proteins; silane film thickness and surface roughness were estimated, and also other surface sensitive techniques were applied. The formation of a monolayer consisting of adsorbed organosilanes was accomplished on Mg-doped GaN surfaces, and also functionalization with proteins was achieved. We found that very high Mg doping reduced the amount of surface functionalized proteins. Most likely, this finding was a consequence of the lower concentration of ionizable Mg atoms in highly Mg-doped layers as a consequence of self-compensation effects. In summary, we could demonstrate the necessity of Mg doping for achieving reasonable bio-functionalization of GaN surfaces.