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Consistent surface-potential-based modeling of drain and gate currents in AlGaN/GaN HEMTs

: Albahrani, Sayed Ali; Heuken, Lars; Schwantuschke, Dirk; Gneiting, Thomas; Burghartz, Joachim N.; Khandelwal, Sourabh


IEEE transactions on electron devices 67 (2020), Nr.2, S.455-462
ISSN: 0018-9383
ISSN: 1557-9646
Fraunhofer IAF ()
compact model; Fowler-Nordheim (FN) tunneling; GaN high-electron mobility transistor (HEMT); gate leakage current; Poole-Frenkel (PF) emission; hermionic emission (TE)

In this article, the gate current in AlGaN/GaN high-electron mobility transistors is modeled in a surface potential-based compact model. The thermionic emission, the Poole–Frenkelemission, and the Fowler–Nordheimtunneling are the dominant mechanisms for the gate current in the forward- and reverse-bias regions. These conduction mechanisms are modeled within the framework of the ASM-GaN compact model, which is a physics-based industry-standard model for GaN HEMTs, hence yielding a consistent model for the drain and gate currents. The proposed model captures the gate voltage, drain voltage, temperature, and gate-length dependencies of the gate current. The results of dc gate-leakage measurements of two GaN HEMT, differing only in terms of gate length, over a wide range of temperature, showing these current-conduction mechanisms, are presented, and the proposed model is validated accordingly. The developed gate current model, implemented in Verilog-A, is in excellent agreement with the experimental data.