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Extreme temperature modeling of AlGaN/GaN HEMTs

: Albahrani, Sayed Ali; Mahajan, Dhawal; Kargazzi, Saleh; Schwantuschke, Dirk; Gneiting, Thomas; Senesky, Debbie G.; Khandelwal, Sourabh


IEEE transactions on electron devices 67 (2020), Nr.2, S.430-437
ISSN: 0018-9383
ISSN: 1557-9646
Fraunhofer IAF ()
compact models; gallium nitride; High-electron-mobility transistors (HEMTs); high-temperature modeling; physics-based models; semiconductor device measurement; semiconductor device modeling

The industry standard advanced SPICE model (ASM)-GaN compact model has been enhanced to model the GaN high electron mobility transistors (HEMTs) at extreme temperature conditions. In particular, the temperature dependence of the trapping behavior has been considered and a simplifying approximation in the temperature modeling of the saturation voltage in the ASM-GaN model has been relaxed. The enhanced model has been validated by comparing the simulation results of the model with the dc I – V measurement results of a GaN HEMT measured with chuck temperatures ranging from 22º C to 500º C.A detailed description of the modeling approach is presented. The new formulation of the ASM-GaN compact model can be used to simulate the circuits designed for extreme temperature environments.