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Role of contacts in carbon nanotube giant piezoresistive sensors

: Böttger, S.; Wagner, C.; Lorkowski, F.; Hartmann, M.; Heldt, G.; Reuter, D.; Schuster, J.; Hermann, S.


Institute of Electrical and Electronics Engineers -IEEE-:
20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII, TRANSDUCERS & EUROSENSORS 2019 : 23-27 June 2019, Berlin, Germany
Piscataway, NJ: IEEE, 2019
ISBN: 978-1-5386-8104-6
ISBN: 978-1-5386-8105-3
ISBN: 978-1-7281-2007-2
International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers) <20, 2019, Berlin>
European Conference on Solid-State Transducers (Eurosensors) <33, 2019, Berlin>
Fraunhofer ENAS ()

From the perspective of wafer-level integration technologies, this work presents theoretical and experimental insights on fundamental device properties of single-walled carbon nanotubes (SWCNTs) based giant piezoresistive transducers. The role of contacts in such devices and their contribution to a significant tunneling-related sensitivity enhancement is demonstrated. The origin of this phenomenon is the strain dependence of the effective Schottky barrier (SB) width, which is modulated by a drain-source voltage (V DS ) dependent large built-in electric field F at the Schottky barrier. Moreover, perspectives for forthcoming sensor generations exposing operation regimes beyond intrinsic sensitivity are revealed.