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MBE of III-Nitride Semiconductors for Electronic Devices

: Aidam, Rolf; Ambacher, Oliver; Diwo, Elke; Godejohann, Birte-Julia; Kirste, Lutz; Lim, T.; Quay, Rüdiger; Waltereit, Patrick


Asahi, Hajime (Ed.):
Molecular beam epitaxy : Materials and applications for electronics and optoelectronics
Hoboken/NJ: Wiley & Sons, 2019
ISBN: 978-1-119-35501-4
ISBN: 978-1-119-35502-1
ISBN: 978-1-119-35498-7
ISBN: 978-1-119-35500-7
Aufsatz in Buch
Fraunhofer IAF ()

In this chapter, the different growth techniques of plasma‐assisted molecular beam epitaxy (PAMBE) and ammonia‐based MBE (ammonia MBE) are presented. The emphasis is on the growth of binary GaN and AlN, ternary tensile‐strained AlGaN, lattice‐matched ternary AlInN and quaternary AlGaInN, as well as intentional incorporation of silicon for n‐type doping, magnesium for p‐type doping, and carbon for charge carrier compensation. Essential aspects of the growth of Ga‐face electron devices are described for AlGaN/GaN high electron mobility transistors (HEMT). This includes the use of different substrates like silicon carbide (SiC) and silicon. Additional device concepts, in particular high‐frequency and normally‐off structures, are presented.