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High-Rate Growth of Single-Crystalline Diamond (100) Films by Hot-Filament Chemical Vapor Deposition with Tantalum Filaments at 3000 °C

: Tabakoya, T.; Kanada, S.; Wakui, Y.; Takamori, Y.; Yamada, T.; Nagai, M.; Kojima, Y.; Ariyada, O.; Yamasaki, S.; Nebel, C.E.; Matsumoto, T.; Inokuma, T.; Tokuda, N.


Physica status solidi. A 216 (2019), Nr.21, Art. 1900244, 4 S.
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Fraunhofer IAF ()

Single‐crystalline (100) diamond films are grown using hot‐filament chemical vapor deposition at 3000 °C for the first time, which is achieved using tantalum filaments. A high growth rate of 10 μm h−1 is achieved, which is ≈50 times faster than that achieved at 2000 °C. The Raman spectrum of the diamond film grown at high rate shows a peak at 1333 cm−1 with a full‐width at half‐maximum of 2.8 cm−1, which is comparable with that of the seed substrate (2.7 cm−1). The surfaces of grown films are smooth, without hillocks or nonepitaxial crystallites.