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300 GHz broadband power amplifier with 508 GHz gain-bandwidth product and 8 dBm output power

: Schoch, Benjamin; Tessmann, Axel; Leuther, Arnulf; Wagner, Sandrine; Kallfass, Ingmar


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
IEEE MTT-S International Microwave Symposium, IMS 2019 : 2-7 June 2019, Boston, Massachusetts
Piscataway, NJ: IEEE, 2019
ISBN: 978-1-7281-1309-8
ISBN: 978-1-7281-1310-4
International Microwave Symposium (IMS) <2019, Boston/Mass.>
Fraunhofer IAF ()
H-band; power amplifier (PA); metamorphic high electron mobility transistor (mHEMT); sub-millimeter-wave monolithic integrated circuit (S-MMIC)

This paper presents a broadband H-band (220 - 325 GHz) power amplifier in a 35nm InGaAs-based metamorphic high electron mobility transistor technology. The amplifier is realized as a submillimeter-wave monolithic integrated circuit (S-MMIC) and is designed to drive a high power amplifier in a multi-gigabit communication system. The five-stage amplifier S-MMIC based on common-source gain cells was realized and measured on-wafer with a maximum gain of 23 dB at 285 GHz. The lower and higher cutoff frequency is 278 and 335 GHz, respectively, with a gain variation of around 4 dB. The amplifier has four parallel transistors in the last two stages and provides a saturated output power of 8dBm at 300 GHz. A gain-bandwidth product (GBW) of 508 GHz could be achieved.