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W-Band LNA MMICs based on a noise-optimized 50-nm gate-length metamorphic HEMT Technology

: Thome, Fabian; Leuther, Arnulf; Heinz, Felix; Ambacher, Oliver

Preprint urn:nbn:de:0011-n-5496516 (2.0 MByte PDF)
MD5 Fingerprint: a1324e6308eaec73a346bd909b746005
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Erstellt am: 1.8.2019

Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2019 : 2-7 June 2019, Boston, Massachusetts
Piscataway, NJ: IEEE, 2019
ISBN: 978-1-7281-1309-8
ISBN: 978-1-7281-1310-4
International Microwave Symposium (IMS) <2019, Boston/Mass.>
European Commission EC
H2020; 730562; RadioNet4
Advanced Radio Astronomy in Europe
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IAF ()
balanced amplifier; high-electron-mobility transistor (HEMT); low-noise amplifier (LNA); millimeter-wave integrated circuit (MMIC); E-band; W-band

In this paper, the design, analysis, and room-temperature performance of two W-band LNA MMICs fabricated in two different technology variations are presented. The investigation demonstrates the noise improvement of the given 50-nm gate-length InGaAs mHEMT technology with reduced necessary drain currents. Therefore, a single-ended and balanced W-band LNA MMIC were designed, fabricated, and characterized. The amplifiers exhibit state-of-the-art noise temperatures with an average value for the single-ended LNA of 159K (1.9 dB) with lowest values of 132K (1.6 dB). Due to the technology investigation it was possible to reduce the noise temperature by about 15K compared to the reference technology in combination with superior MMIC yield.