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Large-signal modeling of a scalable high-Q AlGaN/GaN high electron-mobility varactor

: Amirpour, Raul; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver


IEEE transactions on microwave theory and techniques 67 (2019), Nr.3, S.922-927
ISSN: 0018-9480
Fraunhofer IAF ()
dispersion; gallium nitride (GaN); high electron-mobility varactor (HEMVAR); modeling; varactor

In this paper, a new large-signal model for gallium nitride high electron-mobility varactors is presented. Compared to former models, this model is scalable and describes the whole range of operation from breakdown to forward conduction. The model consists of a passive parasitic shell, an ideal intrinsic core, and takes dispersion into account. The main extraction is done on an eight-finger device with a tuning ratio of 4.3 and a minimum quality factor Q above 30 for frequencies below 2 GHz. The model is verified for a large range of bias points and frequencies. Load–pull measurements provide evidence even at high RF input power up to 23 dBm.