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Multi-stage cascode in high-voltage AlGaN/GaN-on-Si technology

: Reiner, Richard; Waltereit, Patrick; Mönch, Stefan; Dammann, Michael; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Power Electronics Society; IEEE Electron Devices Society:
6th Annual IEEE Workshop on Wide Bandgap Power Devices & Applications, WiPDA 2018 : Atlanta, Georgia, Oct. 31-Nov. 2, 2018
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-5909-0
ISBN: 978-1-5386-5908-3
ISBN: 978-1-5386-5910-6
Workshop on Wide Bandgap Power Devices and Applications (WiPDA) <6, 2018, Atlanta/Ga.>
Fraunhofer IAF ()
power transistors; gallium nitride; cascode circuit; monolithic integration; field plate; high-voltage devices

This work investigates a new approach of a multistage cascode. The concept is applied as intrinsic structure in an AlGaN/GaN-on-Si technology. The fabricated device achieves an off-state voltage >600 V and an on-state resistance of 14 Ω mm. A special pull-down pin is connected to the source of the highest segments. This pin can be used for characterization and is intended to drive further stacked cascade segments. Thus, integrated multi-stage cascodes are found suitable as flexible device for high voltage applications.