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260 GHz broadband power amplifier MMIC

: Schoch, Benjamin; Tessmann, Axel; Leuther, Arnulf; Wagner, Sandrine; Kallfass, Ingmar

Verband Deutscher Elektrotechniker e.V. -VDE-, Berlin; Institut für Mikrowellen- und Antennentechnik e.V. -IMA-:
German Microwave Conference, GeMiC 2019 : 25-27 March 2019, Stuttgart, Germany
Stuttgart, 2019
ISBN: 978-3-9812668-9-4
German Microwave Conference (GeMiC) <12, 2019, Stuttgart>
Fraunhofer IAF ()
H-band; power amplifier (PA); metamorphic high electron mobility transistor (mHEMT); sub-millimeter-wave monolithic integrated circuit (S-MMIC)

This paper presents a broadband H-Band (220 -325 GHz) power amplifier in a 35nm InGaAs-based metamorphic high electron mobility transistor technology. The amplifier is realized as a submillimeter-wave monolithic integrated circuit and is designed to drive a high power amplifier in a multi-gigabit communication system or to be implemented in a wideband millimeter-wave radar to detect imperfections in materials. A five-stage amplifier S-MMIC based on common-source gain cells was realized and measured on-wafer with a maximum gain of 14.7 dB at 245 GHz. The 3-dB-bandwidth is from 238 to 292 GHz with a gain variation of around 2 dB. The amplifier has four parallel transistors in the last two stages and provides up to 4dBm of output power, under 1 dB gain compression. A saturated output power of 6.7dBm at 280GHz could be measured.