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Reliability testing of integrated low-temperature PVD PZT films

: Monteiro Diniz Reis, D.; Rzepka, S.; Hiller, K.


Microelectronics reliability 88-90 (2018), S.835-839
ISSN: 0026-2714
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) <29, 2018, Aalborg>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer ENAS ()

Reliability and integration of Lead Zirconate Titanate (PZT) is still a strong concern regarding its commercialization. In this work an approach to include reliability on wafer-level for integration and process development is presented. Long-term leakage current development with high statistics of integrated low-temperature PVD PZT capacitors at different temperature, voltage and polarity are discussed. Strong similarities to the behavior of pulsed laser deposition (PLD), sol-gel and ceramic PZT were obtained. It is proposed to use the current evolution after first breakdown as possible indication of remaining useful life. Changes of the Weibull slope above a temperature of 150 °C and gradual change over voltage acceleration in the range of 100 kV/cm to 200 kV/cm were found. This indicates that accelerated lifetime testing in the temperature range below 150 °C is possible and caution is required for voltage acceleration.