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Scalable fabrication of carbon nanotube field-effect transistors (CNT-FETs) implementing wafer-level electron-beam lithography and dielectrophoretic CNT assembly

: Blaudeck, T.; Hermann, S.; Hartmann, M.; Böttger, S.; Tittmann-Otto, J.; Heldt, G.; Reuter, D.; Schulz, S.E.

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New directions in biocomputation. Program, abstracts and participants : Dresden, Germany, September 12-13, 2017
Dresden, 2017
Workshop "New Directions in Biocomputation" <2017, Dresden>
Abstract, Elektronische Publikation
Fraunhofer ENAS ()

Since their discovery in 1998, Carbon Nanotube Field-Effect Transistors (CNTFETs) have gained considerable interest as nanoelectronic components [1]. The nanoscopic quasi-one-dimensional geometry of single-walled carbon nanotubes (SWCNTs) and saturated bonds in their cylindrical molecular system allow a strong gate coupling, high charge carrier mobility, and low scattering figures in the CNT transistor channel. In the electronic sense, semiconducting SWCNTs represent ‘the ultimate thin-body semiconductor system’ waiving short-channel effects that typically occur in miniaturized of bulk semiconductor materials [2]. During the last decade, Fraunhofer ENAS and TU Chemnitz, Center for Microtechnologies have developed a comprehensive wafer-level nanotechnology platform offering engineering methods of nanopatterning and nano-micro integration for nanoelectronic components such as CNT-FETs. Application-wise, the CNT-FETs have been envisaged a novel key component for devices, circuits and systems in high-frequency domain [3] as well as sensor applications such as nanoelectromechanical (piezoresistive) [4], optical [5], biological or chemical detectors. For a scalable fabrication of such nanoelectronic and sensoric devices, the technological workflow needs high-level micro-nano patterning of appropriate transistor structures and advanced selection [6] and integration [7] concepts for the nanoelectronic materials, i.e. SWCNTs. We report on the sub-um structuring of electrode structures (patterned source-drain, embedded and structured gate) by means of conventional and electron-beam lithography (EBL), standard metallization, wafer-compatible dielectrophoretic SWCNT assembly and various consequent steps of post processing. We discuss especially the role of an effective contact formation between the nanomaterials and the electrodes for functional devices.