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Full W-band GaN power amplifier MMICs using a novel type of broadband radial stub

: Ćwikliński, Maciej; Friesicke, Christian; Brueckner, Peter; Schwantuschke, Dirk; Wagner, Sandrine; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver


IEEE transactions on microwave theory and techniques 66 (2018), Nr.12, Pt.2, S.5664-5675
ISSN: 0018-9480
Fraunhofer IAF ()
broadband; gallium nitride (GaN); highelectron-mobility transistor (HEMT); millimeter-waves (mm-waves); monolithic microwave integrated circuit (MMIC); power amplifier (PA); radial stub; W-band (75-110 GHz)

In this paper, we describe the design of the first reported full W-band (75–110 GHz) power amplifier (PA) monolithic microwave integrated circuits (MMICs) based on gallium nitride technology. The discussed MMICs come in two versions. Over a bandwidth (BW) of 70–110 GHz, the three stage PA can deliver, on average, 25.6 dBm with a power-added efficiency (PAE) of 6.5%, while the four-stage PA is able to generate 27 dBm with a PAE of 6.1%. A peak output power of 28.6 dBm is achieved at 80 GHz with a PAE of 8.6%, which corresponds to a power density of 2.6 W/mm. The significant BW was achieved partially by incorporating a novel type of broadband radial stub into the design, which can provide nearly atwofold rejection-BW improvement over the conventional version. To the best of our knowledge, no other solid-state circuit can deliver such power levels over the complete W-band.