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InGaAs-on-insulator MOSFETs featuring scaled logic devices and record RF performance

: Zota, Cezar B.; Convertino, Clarissa; Deshpande, Veeresh; Merkle, Thomas; Sousa, Marilyne; Caimi, Daniele; Czornomaz, Lukas


Khare, M. ; Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
IEEE Symposium on VLSI Technology 2018 : Honolulu, Hawaii, USA, 18-22 June 2018
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-4218-4
ISBN: 978-1-5386-4219-1
Symposium on VLSI Technology <38, 2018, Honolulu/Hawaii>
Fraunhofer IAF ()

We demonstrate scaled InGaAs-on-insulator FinFETs and planar MOSFETs on Si substrate for low power logic and RF applications. This Si-CMOS compatible technology implements SiN x source-drain spacers and doped extensions for reduced overlap capacitances. FinFETs with performance for logic applications matching state-of-the-art are demonstrated. Simultaneously, f t and f max of 400 and 100 GHz are achieved respectively, the highest reported f t for a III-V MOSFET on Si. Finally, we explore the use of an extended gate line to reduce gate resistance, offering balanced f t /f max of 215/300 GHz, the first report of III-V RF devices on Si matching state of the art Si-CMOS.