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Performance evaluation of commercial GaN RF HEMTs as hybrid topology power switches

: Pereira, Aaron; Al-Sarawi, Said; Weste, N.; Abbott, D.; Carrubba, Vincenzo; Quay, Rüdiger


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Radar Conference 2018, RadarConf 2018 : 23-27 April 2018, Oklahoma City, USA
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-4168-2 (print)
ISBN: 978-1-5386-4167-5 (electronic)
ISBN: 978-1-5386-4165-1 (CD-ROM)
ISBN: 978-1-5386-4166-8 (USB)
Radar Conference (RadarConf) <2018, Oklahoma City/Okla.>
Fraunhofer IAF ()

This paper describes the potentials and limitations of commercially available bare-die RF GaN HEMTs as a power stage in switch-based supply modulators. The impact of trapping on the efficiency of high frequency switching circuits is investigated by characterizing RF HEMTs as power transistors in a high frequency switching topology. The performance evaluation is based on a comparison of simulation and measured results of a 12 W, and 14 W, synchronous buck converter prototype operating at 10 MHz. Measured efficiency peaks are above 93.1%and 95.8%at 10 MHz and remain above 90% over a wide range of operating conditions. The simulated PAE of the amplifier is improved by 6.5% using dynamic drain bias for input power variation between 16 and 20 dBm. The PAE was improved up to 22 dBm of input power.