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High operating temperature InAs/GaSb type-II superlattice detectors on GaAs substrate for the long wavelength infrared

: Müller, Raphael; Gramich, Vera; Wauro, Matthias; Niemasz, Jasmin; Kirste, Lutz; Daumer, Volker; Janaszek, A.; Jureńczyk, J.; Rehm, Robert

Volltext ()

Infrared physics and technology 96 (2019), S.141-144
ISSN: 1350-4495
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IAF ()
InAs/GaSb; T2SL; TEC; infrared detectors; HOT

We report on the development of InAs/GaSb type-II superlattice infrared photodetectors for operation under temperatures reachable with thermoelectric cooling. We investigate optically immersed, laterally operated photoconductors with a cutoff wavelength around 10 μm at an operating temperature of 200 K. The identification of a suitable superlattice composition, the growth of a linearly graded metamorphic buffer layer and the transfer of the device concept from GaSb to GaAs are motivated and described. We show that immersion lens technology even for non-doping optimized devices enables a peak spectral detectivity above 6×109 cm Hz0.5W−1 at 195 K, approaching the performance of commercially available HgCdTe-based photoconductors.