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X-band GaN high power amplifier with integrated power switch for airborne applications

: Pereira, Aaron; Al-Sarawi, Said; Weste, N.; Abbott, D.; Kühn, Jutta; Carrubba, Vincenzo; Quay, Rüdiger


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Radar Conference 2018, RadarConf 2018 : 23-27 April 2018, Oklahoma City, USA
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-4168-2 (print)
ISBN: 978-1-5386-4167-5 (electronic)
ISBN: 978-1-5386-4165-1 (CD-ROM)
ISBN: 978-1-5386-4166-8 (USB)
Radar Conference (RadarConf) <2018, Oklahoma City/Okla.>
Fraunhofer IAF ()

This paper reports an X-Band High Power Amplifier (HPA) integrated with a power switch demonstrated for the first time in a 0.25 μm GaN process. The power switch and its drivers are implemented in a synchronous buck converter topology with off-chip filters to modulate the drain supply. The designed supply modulator is then combined with X-band GaN HPA on the same die and the integrated system is experimentally measured as a function of power and frequency. The measured PAE of the combined HPA and supply modulator is 26.8% at a drain voltage of 20 V while delivering maximum output power 35 dBm.