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mm-Wave operation of AlN/GaN-devices and MMICs at V- & W-band

: Schwantuschke, Dirk; Godejohann, Birte-Julia; Brueckner, Peter; Tessmann, Axel; Quay, Rüdiger


Institute of Electrical and Electronics Engineers -IEEE-; Institute of Electrical and Electronics Engineers -IEEE-, Poland Section:
22nd International Microwave and Radar Conference, MIKON 2018 : May 14-17, 2018, Poznán, Poland
Piscataway, NJ: IEEE, 2018
ISBN: 978-83-949421-1-3
ISBN: 978-83-949421-0-6
ISBN: 978-1-5386-3723-4
International Microwave and Radar Conference (MIKON) <22, 2018, Poznán>
Fraunhofer IAF ()
V-band power amplifier; W-band power amplifier; monolithic microwave integrated circuit (MMIC); aluminum nitride; gallium nitride

This paper presents recent device and MMIC results of a 70 nm AlN/GaN-HEMT technology. Based on DC-transfer characteristics, a high saturated drain current of more than 1700 mA/mm, and a maximum transconductance of 470 mS/mm were measured for this technology. A transit frequency of ft = 110 GHz along with a maximum oscillation frequency f max = 300 GHz has been extracted. A maximum PAE of 60 %, and a maximum output power density of more than 2.6 W/mm have been demonstrated on single-device level by performing load-pull measurements. The achieved device performance is further verified based on circuit level by the realization of two power amplifiers. MMIC 1 demonstrates a high saturated output power of more than 30 dBm (1 W) between 70-86 GHz. A maximum output power of P out = 28.5 dBm (700 mW) was determined at 94 GHz for MMIC 2.