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RF-noise modeling of InGaAs metamorphic HEMTs and MOSFETs

: Heinz, Felix; Schwantuschke, Dirk; Leuther, Arnulf; Tessmann, Axel; Ohlrogge, Matthias; Quay, Rüdiger; Ambacher, Oliver


13th European Microwave Integrated Circuits Conference, EuMIC 2018. Proceedings : 24-25 September 2018, Madrid, Spain
Piscataway, NJ: IEEE, 2018
ISBN: 978-2-87487-052-1
ISBN: 978-1-5386-5286-2
European Microwave Integrated Circuits Conference (EuMIC) <13, 2018, Madrid>
Fraunhofer IAF ()

The mechanisms causing the RF-noise in InGaAs metamorphic HEMTs and MOSFETs have been investigated and compared. A small signal model for InGaAs- metamorphic HEMTs and InGaAs MOSFETs, including an accurate description of the RF-noise, is presented. The model is based on a distributed multiport-network approach, which is scalable in gate width, the number of gate-fingers and covers usual bias points used in amplifier circuits. The noise model is capable of analyzing the sources of noise in InGaAs HEMTs and MOSFETs and their impact on the overall device noise figure. The new extracted MOSFET model is verified on circuit level in the W-Band (75 to110 GHz).