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Buried-heterostructure quantum cascade lasers fabricated using a sacrificial layer and a two-step regrowth process

: Driad, Rachid; Bächle, Andreas; Aidam, Rolf; Yang, Quankui K.


Anderson, T.J. (Ed.) ; Electrochemical Society -ECS-:
State-of-the-Art Program on Compound Semiconductors 61 (SOTAPOCS 61) and Low-Dimensional Nanoscale Electronic and Photonic Devices 11 : Held during the AiMES 2018, ECS and SMEQ Joint International Meeting, in Cancun, Mexico, from September 30 - October 4, 2018
Pennington, NJ: ECS, 2018 (ECS transactions 86.2018, Nr.9)
ISBN: 978-1-62332-543-5
ISBN: 978-1-62332-544-2
ISBN: 978-1-60768-855-6
Symposia "State-of-the-Art Program on Compound Semiconductors" (SOTAPOCS) <61, 2018, Cancun>
Symposia "Low-Dimensional Nanoscale Electronic and Photonic Devices" <11, 2018, Cancun>
Americas International Meeting on Electrochemistry and Solid State Science (AIMES) <2018, Cancun>
Fraunhofer IAF ()

We report various aspects related to the selective area growth of thick InP:Fe layers by metal organic vapor deposition and their application to buried-heterostructures. In particular, we focus on the development of planar buried-heterostructure quantum cascade lasers using selective wet chemical etching for ridge mesa preparation and versatile regrowth processes. After describing the optimization of the insulating properties of InP:Fe layers, we expose our approach to circumvent the difficulties inherent to the selective area growth on non-planar structures. By adding an InGaAs/InP layer stack (where, the InGaAs layer is used as a sacrificial layer) on the top of the active region, reproducible regrowths have been successfully carried out with good optical, electrical and crystalline quality. Using this method, buried-heterostructure quantum cascade lasers characterized in TM00 mode, exhibited output powers in the range of 2.5 W and wall plug efficiencies of about 13% at room temperature.