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Investigation of differential broadband amplifiers in normally-on mHEMT technology

: John, Laurenz; Merkle, Thomas; Friesicke, Christian; Tessmann, Axel; Leuther, Arnulf; Schlechtweg, Michael; Zwick, Thomas


Institute of Electrical and Electronics Engineers -IEEE-:
11th German Microwave Conference, GeMiC 2018 : Riding the green waves, 12-14 March 2018, Freiburg, Germany
Piscataway, NJ: IEEE, 2018
ISBN: 978-3-9812668-8-7
ISBN: 978-1-5386-3740-1
German Microwave Conference (GeMiC) <11, 2018, Freiburg>
Fraunhofer IAF ()
differential amplifier; direct-coupled; baseband amplifier; MHEMT

This paper presents differential DC–28 GHz two stage baseband amplifier topologies realized in a 35 nm gate length InAlAs/InGaAs mHEMT technology. They are intended as buffer amplifiers of future single-chip receiver MMICs for point to-point communication systems. Implementation possibilities of DC-offset cancellation and gain control without affecting the bandwidth are shown for the normally-on mHEMT technology. DC-offset levels up to ±0.2V can be compensated. The required chip area is 0.1mm2 and the presented circuits are therefore suitable for integration in single-chip sub mm-wave receiver MMICs.