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In situ load-pull MMIC for large-signal characterization of mHEMT devices at submillimeter-wave frequencies

: John, Laurenz; Ohlrogge, Matthias; Wagner, Sandrine; Friesicke, Christian; Tessmann, Axel; Leuther, Arnulf; Zwick, Thomas


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2018 : June 10 - June 15, 2018, Philadelphia, Pennsylvania
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-5067-7
International Microwave Symposium (IMS) <2018, Philadelphia/Pa.>
Fraunhofer IAF ()
in situ load-pull; tunable matching network; MHEMT

An in situ load-pull MMIC with preamplifier and tunable output matching network in a 35nm InAlAs/InGaAs technology is presented in this paper. The load impedance tuning is realized using an open-circuit stub network with shunt-FETs. The tunable load impedance range and the large signal characterization of a 2x15μm device is demonstrated at 300 GHz. With this MMIC the unique characterization and large signal model validation of mHEMT devices at sub-mm wave frequencies is possible. The total chip area required for large signal characterization of a single device is 1850μm x 400 μm.