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70-116-GHz LNAs in 35-nm and 50-nm gate-length metamorphic HEMT technologies for cryogenic and room-temperature operation

: Thome, Fabian; Leuther, Arnulf; Gallego, Juan Daniel; Schäfer, Frank; Schlechtweg, Michael; Ambacher, Oliver

Postprint urn:nbn:de:0011-n-5038528 (1.5 MByte PDF)
MD5 Fingerprint: 4acbe063fa5d152f4db83910abe18bfb
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Erstellt am: 9.10.2018

Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2018 : June 10 - June 15, 2018, Philadelphia, Pennsylvania
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-5067-7
International Microwave Symposium (IMS) <2018, Philadelphia/Pa.>
European Commission EC
H2020-INFRAIA-2016-1; 730562; RadioNet
RadioNet4-Adveanced Radio Astronomy in Europe
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IAF ()
cryogenic; high-electron-mobility transistor (HEMT); low-noise amplifiers (LNAs); millimeter-wave integrated circuit (MMIC); E-band; W-band

In this paper, the room-temperature and cryogenic performance of two low-noise amplifier (LNA) modules in the frequency range from 70 to 116GHz is presented and analyzed. The investigation is based on LNA millimeter-wave integrated circuits using 35-nm and 50-nm gate-length metamorphic high electron-mobility transistor technologies. At room temperature, the WM-2540 waveguide modules demonstrate an average noise temperature of 214 and 247K over the 70–116-GHz frequency range. The lowest achieved noise temperatures are 171 and 196 K. When cooling the LNA modules to an ambient temperature of 6 K, the average noise temperatures improve to 30:1 and31 K. The lowest achieved noise temperatures are 20:7 and19:2 K. To the best of the authors’ knowledge, the demonstrated LNAs yield the lowest published average noise temperatures at room temperature over the 70–116-GHz frequency range. Furthermore, the achieved cryogenic noise performance is among the best results published so far.