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Electrical properties of schottky-diodes based on B doped diamond

: Erlbacher, T.; Huerner, A.; Zhu, Y.; Bach, L.; Schletz, A.; Zürbig, Verena; Pinti, Lucas; Kirste, Lutz; Giese, Christian; Nebel, Christoph E.; Bauer, A.J.; Frey, L.


Stahlbush, R.:
Silicon Carbide and Related Materials 2017 : International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, September 17-22, 2017, Washington, DC
Durnten-Zurich: TTP, 2018 (Materials Science Forum 924)
ISBN: 978-3-0357-1145-5
ISBN: 978-3-0357-2145-4
ISBN: 978-3-0357-3145-3
International Conference on Silicon Carbide and Related Materials (ICSCRM) <2017, Washington/DC>
Fraunhofer IISB ()
Fraunhofer IAF ()
device modelling; diamond device; ideality factor; monocrystalline diamond; Schottky Barrier Lowering; Schottky Diode

Schottky diodes fabricated on free-standing B doped monocrystalline diamond substrate have been investigated. As expected, reverse leakage current due to Schottky barrier lowering has been observed due to the high electric field at the metal-semiconductor interface. Forward current is highest under operating temperatures between 400 and 450K due to incomplete ionization hole mobility dependence on temperature. It is demonstrated that the static device characteristics in the temperature range from 300K to 450K can be modelled by parametrizing an analytical introduced for unipolar SiC and Si diodes.