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Continuous-tunable single-frequency 2 μm GaSb-based thin device semiconductor disk laser

: Adler, Steffen; Holl, Peter; Lindner, Chiara; Diwo-Emmer, Elke; Bächle, Andreas; Aidam, Rolf; Göhlich, Oliver; Bronner, Wolfgang; Rattunde, Marcel


Institute of Electrical and Electronics Engineers -IEEE-:
Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference, CLEO/Europe-EQEC 2017 : 25-29 June 2017, Munich, Germany
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5090-6736-7
ISBN: 978-1-5090-6737-4
Conference on Lasers and Electro-Optics Europe (CLEO) <2017, Munich>
European Quantum Electronics Conference (EQEC) <2017, Munich>
Fraunhofer IAF ()

The (AlGaIn)(AsSb) materials system has been shown to be ideally suited to realize semiconductor disk laser (SDL) for the 1.9–2.8 μm wavelength range [1-3]. Using barrier pumping with commercial diode lasers, cw output power exceeding 17 W at 20°C heatsink temperature has been shown recently [4]. In order to achieve these high output powers, an intracavity heatspreader is used, which is bonded on top of the SDL-chip. While these high-power SDLs are well suited for medical therapy or material processing, many applications in this wavelength regime, such as high-resolution spectroscopy, long-range gas sensing, LIDAR, seeding of pulsed laser systems and quantum optical experiments, require continuously tunable narrow linewidth, single-frequency emission.