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Operation of PCB-embedded, high-voltage multilevel-converter GaN-IC

: Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver


Kaplar, B. ; Institute of Electrical and Electronics Engineers -IEEE-; IEEE Power Electronics Society; Power Sources Manufacturers Association -PSMA-; IEEE Electron Devices Society:
WiPDA 2017, 5th Annual IEEE Workshop on Wide Bandgap Power Devices & Applications : Albuquerque, NM, October 30-November 1, 2017
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5386-3117-1
ISBN: 978-1-5386-3116-4
ISBN: 978-1-5386-3118-8
Workshop on Wide Bandgap Power Devices and Applications (WiPDA) <5, 2017, Albuquerque/NM>
Fraunhofer IAF ()
GaN; IC; multilevel converter; diode-clamped; T-type NPC Inverter; monolithic integration; high voltage; common substrate; Key Publication

This work presents the operation of a PCB embedded diode-clamped multilevel-converter integrated circuit (IC) fabricated in a lateral, high-voltage AlGaN/GaN-on-Si hetero junction technology. It is demonstrated, that PCB-embedding is an appropriate assembly technique for lateral powerICs with high-integration levels. By placing DC-link capacitors onto the IC-package, parasitc inductances in the power loop can be reduced to the sub-nH range. Considerations regarding common substrate biasing issues in lateral GaN-ICs enable the inverter operation of the 2x3 mm2-ICat input voltages up to 300 V and output power levels of 45W at a switching frequency of 100 kHz.