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Silicon sacrificial layer technology for the production of 3D MEMS (EPyC process)

: Louriki, L.; Staffeld, P.; Kaelberer, T.; Otto, T.

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Proceedings. MDPI AG 1 (2017), Nr.4, Art. 295, 5 S.
ISSN: 2504-3900
Eurosensors Conference <31, 2017, Paris>
Zeitschriftenaufsatz, Konferenzbeitrag, Elektronische Publikation
Fraunhofer ENAS ()

The EPyC process uses silicon sacrificial layer technology, which makes it possible to generate high volume sacrificial structures of up to 100 microns thickness. The biggest challenge is the rapid and complete removal of the 3D sacrificial structure at the end of the process. This paper examines and compares in detail two silicon dry etching methods to optimize a new silicon etching process for successful EPyC manufacturing.