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Optimization of transfer times in pinned photodiodes

: Girgenrath, L.; Hofmann, M.; Kühnhold, R.; Vogt, H.


Raposo, M. ; Institute for Systems and Technologies of Information, Control and Communication -INSTICC-, Setubal:
PHOTOPTICS 2017, 5th International Conference on Photonics, Optics and Laser Technology. Proceedings : Porto, Portugal, February 27-March 1, 2017
Setúbal: SciTePress, 2017
ISBN: 978-989-758-223-3
International Conference on Photonics, Optics and Laser Technology (PHOTOPTICS) <5, 2017, Porto>
Fraunhofer IMS ()

An implantation scheme which enhances the readout speed of a silicon pinned photodiode (PPD) with large pixel length is presented. The basic PPD structure was developed for Time-of-Flight (TOF) distance measurement applications by the Fraunhofer IMS in Duisburg, Germany, and was fabricated in a standard 0.35 mu m CMOS process. The optimized design of this PPD introduces the possibility to improve the electron readout speed by changing the n-well configuration with a second well implantation. The local increase in doping concentration creates a designated electron path which utilizes the reset voltage of the readout node. This behaviour is shown by simulation and measurement results are presented.