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Capacitance-voltage investigation of low residual carrier density in InAs/GaSb superlattice infrared detectors

: Schmidt, Johannes; Rutz, Frank; Daumer, Volker; Rehm, Robert


Infrared physics and technology 84 (2017), S.3-6
ISSN: 1350-4495
International Conference on Quantum Structure Infrared Photodetector (QSIP) <2016, Tel-Aviv>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IAF ()
InAs/GaSb T2SL; MWIR; capacitance-voltage investigation; residual carrier density

Capacitance-voltage (CV) analysis was performed on homojunction InAs/GaSb superlattice photodiodes for the mid-infrared spectral range around 5 1.1.M. The CV investigation was carried out over a wide temperature range from 80 K up to 200 K, for two nominally identical samples from two different epitaxy systems. The characterizations were carried out with a refined measurement setup, considering the impedance range, the measured frequency range and the accessible temperature range. For the calculated residual carrier density in the nid-region of the diodes values in the low 10(14) cm(-3) and 10(15) cm(-3) ranges were found, respectively.