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Light-induced magnetoresistance in solution-processed planar hybrid devices measured under ambient conditions

: Banerjee, S.; Bülz, D.; Reuter, D.; Hiller, K.; Zahn, D.R.T.; Salvan, G.

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Beilstein Journal of Nanotechnology 8 (2017), S.1502-1507
ISSN: 2190-4286
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer ENAS ()

We report light-induced negative organic magnetoresistance (OMAR) measured in ambient atmosphere in solution-processed 6,13- bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) planar hybrid devices with two different device architectures. Hybrid electronic devices with trench-isolated electrodes (HED-TIE) having a channel length of ca. 100 nm fabricated in this work and, for comparison, commercially available pre-structured organic field-effect transistor (OFET) substrates with a channel length of 20 μm were used. The magnitude of the photocurrent as well as the magnetoresistance was found to be higher for the HED-TIE devices because of the much smaller channel length of these devices compared to the OFETs. We attribute the observed light-induced negative magnetoresistance in TIPS-pentacene to the presence of electron-hole pairs under illumination as the magnetoresistive effect scales with the photocurrent. The magnetoresistance effect was found to diminish over time under ambient conditions compared to a freshly prepared sample. We propose that the much faster degradation of the magnetoresistance effect as compared to the photocurrent was due to the incorporation of water molecules in the TIPS-pentacene film.