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First InGaAs lateral nanowire MOSFET RF noise measurements and model

: Ohlsson, Lars; Lindelöw, Fredrik; Zota, Cezar B.; Ohlrogge, Matthias; Merkle, Thomas; Wernersson, Lars-Erik; Lind, Erik

Postprint urn:nbn:de:0011-n-4644562 (735 KByte PDF)
MD5 Fingerprint: 9c8644da7bcfd4fdbe7c231e1deab8bd
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Erstellt am: 21.3.2018

Jena, D. ; IEEE Electron Devices Society:
75th Annual Device Research Conference (DRC) 2017 : University of Notre Dame, South Bend, Indiana, June 25-28, 2017
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5090-6327-7
ISBN: 978-1-5090-6328-4
ISBN: 978-1-5090-6329-1
Paper P-36, 2 S.
Device Research Conference (DRC) <75, 2017, South Bend/Ind.>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IAF ()

The first radio frequency (RF) noise measurements on lateral nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) and a noise model are presented. We have characterized the RF noise and scattering parameters of an indium gallium arsenide (InGaAs) device. A fitted model yields extrapolated ft = 316 GHz current gain cutoff and fmax = 166 GHz maximum oscillation frequency. This device technology is being developed for millimeter wave circuit implementations, targeting a 94 GHz carrier frequency. The modeled intrinsic Fmin < 1dB minimum noise figure obtained promises performance at the target band, given reduction of gate parasitics. In any wireless system, noise and bandwidth limits the performance. Understanding of RF noise in nanowire MOSFET devices is thereby key for realization of future radar and communications systems.