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High temperature EEPROM using a differential approach for high reliability

: Kappert, Holger; Braun, Sebastian; Alfring, Michael; Kordas, Norbert; Kelberer, Andreas; Dreiner, Stefan; Kokozinski, Rainer


IMAPS Additional Conferences (Device Packaging, HiTEC, HiTEN, & CICMT). Online journal 2017 (2017), S.42-45
ISSN: 2380-4491
International Conference and Exhibition on High Temperature Electronics Network (HiTEN) <2017, Cambridge>
Bundesministerium für Bildung und Forschung BMBF
16ES0020K; E²COGaN
Energy Efficient Converters using GaN Power Devices
Fraunhofer IMS ()
high temperature; EEPROM; SOI CMOS

Various applications require the storage of program code or calibration data inside a non-volatile memory. In many cases data is programmed one time e.g. during initial test or calibration and needs to be stored and readable over the whole lifetime of a product. The expected lifetime is a few thousand hours to ten years or even more depending on the application. Due to its ease of use and reprogramming capability EEPROM based memory is very common in this field in comparison to e.g. fuses which are only one time programmable and consume considerable silicon area. High reliability especially with respect to data retention is the main constraint for these non-volatile memories. Considering the degrading mechanisms which are mainly accelerated by thermal energy, storage and operation temperature have a strong impact on EEPROM reliability. Especially at very high temperatures of 250 °C and above data retention is limited to a few thousand hours or less with further increase of temperature, which makes EEPROM hard to use as a long time non-volatile memory. Nevertheless the increasing complexity of high temperature electronics and its use in high temperature applications like data acquisition systems create a demand for reliable non-volatile memories. In this paper a differential approach is presented, with the focus on increasing the reliability of EEPROM based memories especially with respect to data retention. The circuitry has been realized in a 0.35μm high temperature SOI-CMOS technology.