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Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICs

: Thome, Fabian; Leuther, Arnulf; Massler, Hermann; Schlechtweg, Michael; Ambacher, Oliver

Postprint urn:nbn:de:0011-n-4587640 (1.3 MByte PDF)
MD5 Fingerprint: 30a58ae2bb03d16189ae2c957ab31128
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Erstellt am: 25.11.2017

Shiroma, W. (Ed.) ; Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2017 : 06-08 Juni 2017, Honolulu, Hawaii
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5090-6360-4
ISBN: 978-1-5090-6361-1
International Microwave Symposium (IMS) <2017, Honolulu/Hawaii>
European Commission EC
H2020; 730562; RadioNet
Advanced Radio Astronomy in Europe
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IAF ()
high-electron-mobility transistor (HEMT); low-noise amplifiers (LNAs); millimeter-wave integrated circuit (MMIC); E-band; V-band; W-band

Based on two low-noise amplifier (LNA) millimeterwave integrated circuits (MMICs), this paper reports on a comparison between a 35-nm and a 50-nm gate-length metamorphic high-electron-mobility transistor technology. The LNA targets applications in an extended W-band with an operating frequency between 67-116 GHz. Both MMICs yield an