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Charge carrier dynamics in InGaN quantum wells: Stimulated emission depletion and lateral charge carrier motion

: Solowan, Hans-Michael
: Ambacher, Oliver; Schwarz, U.T.; Wöllenstein, J.

Volltext urn:nbn:de:0011-n-4318715 (83 MByte PDF)
MD5 Fingerprint: f16783d9e46e7f5b1525bd51d08f1014
Erstellt am: 14.2.2017


Stuttgart: Fraunhofer Verlag, 2017, 129 S.
Zugl.: Freiburg, Univ., Diss., 2015
Science for systems, 27
ISBN: 978-3-8396-1068-8
Dissertation, Elektronische Publikation
Fraunhofer IAF ()
electronic devices & materials; scanning systems & technology; Angewandte Physik; Halbleiterphysik; InGaN; Indium Gallium Nitrid; Photolumineszenzspektroskopie; Leuchtdiode; Lumineszenzdiode; Student; Doktorand; Wissenschaftler

The focus of this work is the investigation of stimulated emission depletion (STED) and lateral charge carrier motion within InGaN/GaN quantum wells of Indium Gallium Nitride (InGaN) based LEDs.
In the first part, the properties of the STED effect in blue InGaN quantum wells are studied and compared to those of dye systems usually used in STED microscopy. Continuous wave and pulsed measurements are discussed and furthermore analyzed with an extended rate equation system based on the one typically used for fluorescence dyes.
A confocal time of flight method is used in the second part to investigate lateral charge carrier motion in blue and turquoise InGaN quantum wells for various charge carrier densities and in the temperature range between 4 K and room temperature. The measurements are analyzed using a 2D version of the ABC model, which includes drift and diffusion of charge carriers within the quantum well plane.