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Thermal simulations and experimental verification of power modules designed for double sided cooling

: Brinkfeldt, K.; Ottosson, J.; Otto, A.; Mann, A.; Zschieschang, O.; Frankeser, S.; Andersson, D.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Components, Packaging, and Manufacturing Technology Society:
IEEE 66th Electronic Components and Technology Conference, ECTC 2016. Proceedings : 31 May-3 June 2016, Las Vegas, Nevada, USA
Los Alamitos, Calif.: IEEE Computer Society Conference Publishing Services (CPS), 2016
ISBN: 978-1-5090-1205-3 (Print)
ISBN: 978-1-5090-1204-6 (Online)
ISBN: 978-1-5090-1203-9
Electronic Components and Technology Conference (ECTC) <66, 2016, Las Vegas/Nev.>
Fraunhofer ENAS ()

Cooling power modules on both sides of the active switching devices reduces the operational junction temperature compared to conventional single sided cooling. In this work, thermal simulations of power modules based on single sided cooling concepts are compared with double sided cooling counterparts. Expected junction temperatures, maximum temperatures and maximum current capability is analyzed. In addition, experimental verification in the form of comparisons with thermal characterization tests for both single-And double sided power modules based on SiC bipolar junction transistors is presented. Results from simulations show that cooling of both sides of the active switching devices can reduce the thermal resistance by more than 40 percent. This number depends on the heat transfer coefficient.