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Length separation of single-walled carbon nanotubes and its impact on structural and electrical properties of wafer-level fabricated carbon nanotube-field-effect transistors

: Böttger, S.; Hermann, S.; Schulz, S.E.; Gessner, T.


Nanotechnology 27 (2016), Nr.43, Art. 435203, 8 S.
ISSN: 0957-4484
ISSN: 1361-6528
Fraunhofer ENAS ()

For an industrial realization of devices based on single-walled carbon nanotube (SWCNTs) such as field-effect transistors (FETs) it becomes increasingly important to consider technological aspects such as intrinsic device structure, integration process controllability as well as yield. From the perspective of a wafer-level integration technology, the influence of SWCNT length on the performance of short-channel CNT-FETs is demonstrated by means of a statistical and comparative study. Therefore, a methodological development of a length separation process based on size-exclusion chromatography was conducted in order to extract well-separated SWCNT dispersions with narrowed length distribution. It could be shown that short SWCNTs adversely affect integrability and reproducibility, underlined by a 25% decline of the integration yield with respect to long SWCNTs. Furthermore, it turns out that the significant changes in electrical performance are directly linked to a SWCNT chain formation in the transist.