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Nanostructures on CMOS-intelligent sensors and actuators by post processing

: Goehlich, Andreas; Vogt, Holger

Hoffmann, Martin (Hrsg.) ; VDE/VDI-Gesellschaft Mikroelektronik, Mikro- und Feinwerktechnik -GMM-:
Mikro-Nano-Integration. Beiträge des 6. GMM-Workshops 2016. CD-ROM : 5. - 6. Oktober 2016 in Duisburg
Berlin: VDE-Verlag, 2016 (GMM-Fachbericht 86)
ISBN: 978-3-8007-4278-3
ISBN: 3-8007-4278-0
Workshop Mikro-Nano-Integration <6, 2016, Duisburg>
Fraunhofer IMS ()
Nanostructures; post-CMOS integration; atomic layer deposition (ALD)

In view of the upcoming challenges and opportunities of the internet of things (IoT), the industry 4.0 and the social challenges as the aging society an increasing number and diversity of sensors and actors will be used in future in electronic systems. These will require suitable technological platforms. The monolithic integration of micro- or nanostructures i.e. MEMS or NEMS (micro/nano electromechanical systems) on pre-processed CMOS-substrates is a promising approach for the next generation of intelligent sensors and actuators. Post-CMOS processing allows the 3D-integration of sensors and actuators and the decoupling of the complex manufacture of the CMOS-substrate from the processing of the MEMS/NEMS. At Fraunhofer IMS two cleanroom facilities are available to enable advanced post CMOS-processing: a 200 mm CMOS-cleanroom with a robust automotive 350 nm CMOS-technology as well as an advanced MST-cleanroom (MST-Lab & Fab) that is dedicated for post CMOS-processing. In this contribution in particular a technique based on the creation of freestanding nanostructures on CMOS by atomic layer deposition (ALD) is discussed and preliminary results of NEMS on CMOS are presented.